regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
feb.1999 v dss ................................................................................ 300v r ds (on) (max) ............................................................ 0.114 w i d .......................................................................................... 40a 300 30 40 120 275 C55 ~ +150 C55 ~ +150 4.8 v v a a w c c g FS40SM-6 v dss v gss i d i dm p d t ch t stg 15.9max. 4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain outline drawing dimensions in mm v gs = 0v v ds = 0v typical value symbol drain-source voltage gate-source voltage drain current drain current (pulsed) maximum power dissipation channel temperature storage temperature weight to-3p mitsubishi nch power mosfet FS40SM-6 high-speed switching use application smps, dc-dc converter, battery charger, power supply of printer, copier, hdd, fdd, tv, vcr, per- sonal computer etc. maximum ratings (tc = 25 c) parameter conditions ratings unit
feb.1999 300 0 200150100500 250 200 150 100 50 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 23 5710 1 23 5710 2 23 5710 3 3 2 2 t c = 25? single pulse tw=10? 100? 1ms 10ms dc 100ms 20 16 12 8 4 0 0 4 8 12 16 20 p d = 275w t c = 25? pulse test v gs =20v 10v 6v 5v 4.5v 4v 50 40 30 20 10 0 0 1020304050 t c = 25? pulse test v gs = 20v 10v 7v 6v 5v 4v p d = 275w power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) mitsubishi nch power mosfet FS40SM-6 high-speed switching use i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 300v, v gs = 0v i d = 1ma, v ds = 10v i d = 20a, v gs = 10v i d = 20a, v gs = 10v i d = 20a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 20a, v gs = 10v, r gen = r gs = 50 w i s = 20a, v gs = 0v channel to case v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v m a ma v w v s pf pf pf ns ns ns ns v c/w 300 30 2 12.0 3 0.088 1.76 18.0 2850 580 110 45 125 310 140 1.5 10 1 4 0.114 2.28 2.0 0.45 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 40 32 24 16 8 0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 10 2 7 5 3 2 10 0 10 0 23 5710 1 10 1 7 5 3 2 23 5710 2 t c = 25? v ds = 10v pulse test 125? 75? 10 8 6 4 2 0 0 4 8 12 16 20 t c = 25? pulse test 40a 20a i d = 60a 0 23 10 ? 5710 0 23 5710 1 23 5710 2 0.08 0.06 0.04 0.02 0.10 t c = 25? pulse test v gs = 10v 20v 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 5 3 2 23 5710 1 23 5710 0 23 ciss tch = 25? f = 1mhz v gs = 0v coss crss 23 5710 1 10 3 7 5 3 2 10 2 7 5 3 2 23 5710 2 10 0 10 1 tch = 25? v dd = 150v v gs = 10v r gen = r gs = 50 w t f t d(off) t r t d(on) on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) mitsubishi nch power mosfet FS40SM-6 high-speed switching use
feb.1999 5.0 4.0 3.0 2.0 1.0 0 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 1.4 1.2 1.0 0.8 0.6 0.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 10 0 7 5 3 2 10 ? ?0 10 1 7 5 3 2 0 5 0 100 150 v gs = 10v i d = 1/2i d pulse test 50 40 30 20 10 0 0 0.8 1.6 2.4 3.2 4.0 25? v gs = 0v pulse test t c =125? 75? 20 16 12 8 4 0 0 4 0 80 120 160 200 200v 100v v ds = 50v tch = 25? i d = 40a 10 ? 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? 10 ? p dm tw d= t tw t d=1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) mitsubishi nch power mosfet FS40SM-6 high-speed switching use
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